Modeling of Inversion Layer Centroid and Polysilicon Depletion Effects on Ultrathin-Gate-Oxide MOSFET Behavior: The Influence of Crystallographic Orientation

✍ Scribed by Rodriguez, N.; Gamiz, F.; Roldan, J.B.

• Book ID: 114618648
• Publisher: IEEE
• Year: 2007
• Tongue: English
• Weight: 306 KB
• Volume: 54
• Category: Article
• ISSN: 0018-9383
• DOI: 10.1109/ted.2007.891854