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A two-dimensional analytical analysis of subthreshold behavior to study the scaling capability of nanoscale graded channel gate stack DG MOSFETs

✍ Scribed by F. Djeffal; M. Meguellati; A. Benhaya


Publisher
Elsevier Science
Year
2009
Tongue
English
Weight
338 KB
Volume
41
Category
Article
ISSN
1386-9477

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