A method for the removal of free indium from the surface of InP grown by liquid phase epitaxy
โ Scribed by G.R. Antell
- Book ID
- 107789155
- Publisher
- Elsevier Science
- Year
- 1980
- Tongue
- English
- Weight
- 111 KB
- Volume
- 49
- Category
- Article
- ISSN
- 0022-0248
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๐ SIMILAR VOLUMES
## Abstract CsI:Tl films have been crystallized by the liquid phase epitaxy (LPE) method from CsI:Tl (0.3โmol.%) crystalline salt onto CsI substrates. The luminescent and scintillation properties of CsI:Tl films are systematically compared with the corresponding properties of CsI:Tl (0.3 and 0.03%)
Erbium (Er 3+ ) doped LiNbO 3 single crystal thin films have been grown LiNbO 3 (001) substrate by the liquid phase epitaxy method. The crystallinity was determined by high-resolution X-ray diffraction. The lattice mismatch between Er 3+ doped LiNbO 3 films and LiNbO 3 (001) substrate was investigat