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Luminescent and scintillation properties of CsI:Tl films grown by the liquid phase epitaxy method

✍ Scribed by Zorenko, Yu. ;Voznyak, T. ;Turchak, R. ;Fedorov, A. ;Wiesniewski, K. ;Grinberg, M.

Publisher
John Wiley and Sons
Year
2010
Tongue
English
Weight
552 KB
Volume
207
Category
Article
ISSN
0031-8965

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✦ Synopsis

Abstract

CsI:Tl films have been crystallized by the liquid phase epitaxy (LPE) method from CsI:Tl (0.3 mol.%) crystalline salt onto CsI substrates. The luminescent and scintillation properties of CsI:Tl films are systematically compared with the corresponding properties of CsI:Tl (0.3 and 0.03%) crystals grown from the melt. The luminescence of CsI:Tl films and CsI:Tl (0.03%) crystals in the bands peaked at 2.52 and 2.22 eV is related to the radiative relaxation from the weak‐off and strong‐off configurations of excitons localized around Tl^+^ ions, respectively. Apart from single Tl^+^ centers, in highly doped CsI:Tl (0.3%) crystals creation of Tl^+^ dimer centers occurs. These centers form the additional emission bands peaked at 2.42 and 1.98 eV related to the weak‐off and strong‐off configurations of excitons localized around Tl^+^ dimer centers. We found that the dominant mechanism of excitation of the strong‐off luminescence of localized excitons in CsI:Tl films and crystals is the charge‐transfer transition between I^–^ anions and Tl^+^ ions in single and dimer centers.

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