A low temperature study of electron transport properties of tantalum nitride thin films prepared by ion beam assisted deposition
โ Scribed by K. Lal; P. Ghosh; D. Biswas; A.K. Meikap; S.K. Chattopadhyay; S.K. Chatterjee; M. Ghosh; K. Baba; R. Hatada
- Book ID
- 108269285
- Publisher
- Elsevier Science
- Year
- 2004
- Tongue
- English
- Weight
- 156 KB
- Volume
- 131
- Category
- Article
- ISSN
- 0038-1098
No coin nor oath required. For personal study only.
๐ SIMILAR VOLUMES
Silicon nitride (SiN x ) films were prepared by ion-assisted deposition process. The films were analyzed by measurement of scanning electron microscopy (SEM), Fourier transform infrared spectrometry (FTIR), Xray photoelectron spectrometry, spectrophotometer, and ellipsometer measurements. The effect
Carbon nitride thin films may become good competitors for diamond-like carbon, due to their high hardness, high wear resistance, and low friction coefficient. At present, there are only a few studies of the effect of CNx coating hardness and internal stress on its tribological properties, such as co
Y 2 O 3 thin films were deposited by ion beam assisted deposition (IBAD) and the effects of fabrication parameters such as substrate temperature and ion energy on the structure, optical and electrical properties of the films were investigated. The results show that the deposited Y 2 O 3 films had le
The effects of nitrogen-beam voltage on the structure, stress, energy band gap and hardness of AIN thin films deposited on Si (1 1 1), Si (1 00) and sapphire (0001) by ion beam assisted deposition (IBAD) are reported. As the nitrogen-beam voltage was increased from 50 to 200 V, the stress and disord