## Abstract This article presents a divide‐by‐3 CMOS injection locked frequency divider (ILFD) fabricated in a 0.18um CMOS process. The ILFD circuit is realized with a complementary Colpitts CMOS LC‐tank oscillator with an injection MOS connected between the voltage controlled oscillator (VCO) outp
A low power LC-tank SiGe BiCMOS injection locked frequency divider
✍ Scribed by Sheng-Lyang Jang; Jyun-Yan Wun; Cheng-Chen Liu; Miin-Horng Juang
- Publisher
- John Wiley and Sons
- Year
- 2009
- Tongue
- English
- Weight
- 339 KB
- Volume
- 51
- Category
- Article
- ISSN
- 0895-2477
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✦ Synopsis
Abstract
An LC‐tank injection locked frequency divider (ILFD) is proposed, and the ILFDs with a direct‐injection MOSFET and a tail‐injection HBT were implemented in the 0.35 μm SiGe 3P3M BiCMOS technology. Measurement results show that when the tuning voltage is tuned from 0 V to 1.8 V, the free‐running oscillation frequency of ILFD is tunable from 2.29 GHz to 2.94 GHz, and at the incident power of 0 dBm the divide‐by‐2/(‐4) operation range is from the incident frequency 4.2 to 6.7/(9.06 to 11.96) GHz. The core power consumption is 2.6 mW at V~dd~ = 1.1 V. © 2009 Wiley Periodicals, Inc. Microwave Opt Technol Lett 51: 1970–1973, 2009; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.24470
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## Abstract The design of a frequency divider (FD) employing 3‐dimensional (3D) inductors fabricated in the 0.18‐μm 1P6M CMOS technology is reported. The FD consists of two single‐ended complementary Colpitts oscillators coupled with capacitors to generate differential output signals. The aim of us
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