𝔖 Bobbio Scriptorium
✦   LIBER   ✦

A transformer-coupled LC-tank injection locked frequency divider

✍ Scribed by S.-L. Jang; Fei-Hung Chen; Jhin-Fang Huang


Publisher
John Wiley and Sons
Year
2008
Tongue
English
Weight
250 KB
Volume
50
Category
Article
ISSN
0895-2477

No coin nor oath required. For personal study only.

✦ Synopsis


Abstract

This article designs an injection locked frequency divider (ILFD) based on the direct injection technique and transformer‐coupled VCO topology. At the supply voltage of 3.3 V, the tuning range of the free‐running ILFD is from 2.47 to 2.32 GHz, about 150 MHz, and the locking range of the ILFD is from 4.58 to 5.09 GHz, about 510 MHz at the injection signal power of 0 dBm. The ILFD dissipates 188 mW at 3.3 V supply voltage and was fabricated in the TSMC 0.35 μm CMOS 2P4M CMOS technology. At the tuning voltage of 2.5 V, the measured phase noise of free‐running ILFD is about −116.7 dBc/Hz at 1 MHz offset frequency from 2.4 GHz, and the phase noise of the locked ILFD is about −128.6 dBc/Hz, while the input signal is with a power of −4 dBm. © 2008 Wiley Periodicals, Inc. Microwave Opt Technol Lett 50: 592–595, 2008; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.23150


📜 SIMILAR VOLUMES


A Clapp LC-tank injection locked frequen
✍ Sheng-Lyang Jang; Y.-J. Wu; Chien-Feng Lee; M.-H. Juang 📂 Article 📅 2007 🏛 John Wiley and Sons 🌐 English ⚖ 301 KB

## Abstract The design of a frequency divider (FD) employing 3‐dimensional (3D) inductors fabricated in the 0.18‐μm 1P6M CMOS technology is reported. The FD consists of two single‐ended complementary Colpitts oscillators coupled with capacitors to generate differential output signals. The aim of us

A low power LC-tank SiGe BiCMOS injectio
✍ Sheng-Lyang Jang; Jyun-Yan Wun; Cheng-Chen Liu; Miin-Horng Juang 📂 Article 📅 2009 🏛 John Wiley and Sons 🌐 English ⚖ 339 KB

## Abstract An LC‐tank injection locked frequency divider (ILFD) is proposed, and the ILFDs with a direct‐injection MOSFET and a tail‐injection HBT were implemented in the 0.35 μm SiGe 3P3M BiCMOS technology. Measurement results show that when the tuning voltage is tuned from 0 V to 1.8 V, the free

A low power CMOS divide-by-3 LC-tank inj
✍ Sheng-Lyang Jang; Wei Hsung Yeh; Chien-Feng Lee; M.-H. Juang 📂 Article 📅 2007 🏛 John Wiley and Sons 🌐 English ⚖ 363 KB

## Abstract This article presents a divide‐by‐3 CMOS injection locked frequency divider (ILFD) fabricated in a 0.18um CMOS process. The ILFD circuit is realized with a complementary Colpitts CMOS LC‐tank oscillator with an injection MOS connected between the voltage controlled oscillator (VCO) outp

An LC-tank injection locked frequency di
✍ Sheng-Lyang Jang; Fei-Hung Chen; Chien-Feng Lee; M.-H. Juang 📂 Article 📅 2008 🏛 John Wiley and Sons 🌐 English ⚖ 377 KB

## Abstract This article presents a wide locking range injection locked frequency divider (ILFD) implemented using a standard 0.18‐μm CMOS process. The ILFD consists of a double‐cross‐coupled VCO and an injection MOS for coupling injection signal to the resonator. At the supply voltage of 1.8 V, th

Transformer-coupled injection for a V-ba
✍ Hwann-Kaeo Chiou; Hsien-Jui Chen 📂 Article 📅 2008 🏛 John Wiley and Sons 🌐 English ⚖ 348 KB

## Abstract A simple transformer‐coupled injection technique is proposed for a V‐band divide‐by‐three injection‐locked frequency divider (ILFD) in 0.18 μm CMOS technology. This technique provides an effective current injection and results in wide locking range of ILFD. The measured frequency range

Active-inductor-capacitor tank Colpitts
✍ S.-L. Jang; C.-C. Liu 📂 Article 📅 2008 🏛 John Wiley and Sons 🌐 English ⚖ 298 KB

## Abstract This article presents a wide‐locking range injection‐locked frequency divider (ILFD), using a tunable active inductor (TAI), which is used to extend the locking range and to reduce die area. The CMOS ILFD is based on a new Colpitts voltage‐controlled oscillator (CVCO) with TAI‐C tank an