𝔖 Bobbio Scriptorium
✦   LIBER   ✦

A Clapp LC-tank injection locked frequency divider

✍ Scribed by Sheng-Lyang Jang; Y.-J. Wu; Chien-Feng Lee; M.-H. Juang


Publisher
John Wiley and Sons
Year
2007
Tongue
English
Weight
301 KB
Volume
49
Category
Article
ISSN
0895-2477

No coin nor oath required. For personal study only.

✦ Synopsis


Abstract

The design of a frequency divider (FD) employing 3‐dimensional (3D) inductors fabricated in the 0.18‐μm 1P6M CMOS technology is reported. The FD consists of two single‐ended complementary Colpitts oscillators coupled with capacitors to generate differential output signals. The aim of using 3D inductor is to reduce chip size. The divide‐by‐2 LC‐tank injection locked FD is performed by adding an injection nMOS between the differential outputs of the divider. The measurement results show that at the supply voltage of 1.6 V, the divider free‐running frequency is tunable from 3.05 to 3.52 GHz, and at the incident power of 0 dBm the locking range is about 2.9 GHz (43%), from the incident frequency 5.3–8.2 GHz. The core power consumption is 7.14 mW. The die area is 0.625 × 0.672 mm^2^. © 2007 Wiley Periodicals, Inc. Microwave Opt Technol Lett 49: 2625–2628, 2007; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.22819


📜 SIMILAR VOLUMES


A transformer-coupled LC-tank injection
✍ S.-L. Jang; Fei-Hung Chen; Jhin-Fang Huang 📂 Article 📅 2008 🏛 John Wiley and Sons 🌐 English ⚖ 250 KB

## Abstract This article designs an injection locked frequency divider (ILFD) based on the direct injection technique and transformer‐coupled VCO topology. At the supply voltage of 3.3 V, the tuning range of the free‐running ILFD is from 2.47 to 2.32 GHz, about 150 MHz, and the locking range of the

A low power LC-tank SiGe BiCMOS injectio
✍ Sheng-Lyang Jang; Jyun-Yan Wun; Cheng-Chen Liu; Miin-Horng Juang 📂 Article 📅 2009 🏛 John Wiley and Sons 🌐 English ⚖ 339 KB

## Abstract An LC‐tank injection locked frequency divider (ILFD) is proposed, and the ILFDs with a direct‐injection MOSFET and a tail‐injection HBT were implemented in the 0.35 μm SiGe 3P3M BiCMOS technology. Measurement results show that when the tuning voltage is tuned from 0 V to 1.8 V, the free

A low power CMOS divide-by-3 LC-tank inj
✍ Sheng-Lyang Jang; Wei Hsung Yeh; Chien-Feng Lee; M.-H. Juang 📂 Article 📅 2007 🏛 John Wiley and Sons 🌐 English ⚖ 363 KB

## Abstract This article presents a divide‐by‐3 CMOS injection locked frequency divider (ILFD) fabricated in a 0.18um CMOS process. The ILFD circuit is realized with a complementary Colpitts CMOS LC‐tank oscillator with an injection MOS connected between the voltage controlled oscillator (VCO) outp

An LC-tank injection locked frequency di
✍ Sheng-Lyang Jang; Fei-Hung Chen; Chien-Feng Lee; M.-H. Juang 📂 Article 📅 2008 🏛 John Wiley and Sons 🌐 English ⚖ 377 KB

## Abstract This article presents a wide locking range injection locked frequency divider (ILFD) implemented using a standard 0.18‐μm CMOS process. The ILFD consists of a double‐cross‐coupled VCO and an injection MOS for coupling injection signal to the resonator. At the supply voltage of 1.8 V, th

Active-inductor-capacitor tank Colpitts
✍ S.-L. Jang; C.-C. Liu 📂 Article 📅 2008 🏛 John Wiley and Sons 🌐 English ⚖ 298 KB

## Abstract This article presents a wide‐locking range injection‐locked frequency divider (ILFD), using a tunable active inductor (TAI), which is used to extend the locking range and to reduce die area. The CMOS ILFD is based on a new Colpitts voltage‐controlled oscillator (CVCO) with TAI‐C tank an

High-frequency low-power LC divide-by-2/
✍ Y. N. Miao; C.C. Boon; M. A. Do; K. S. Yeo; Y. X. Zhang 📂 Article 📅 2010 🏛 John Wiley and Sons 🌐 English ⚖ 291 KB

## Abstract An LC divide‐by‐2/3 injection‐locked frequency divider (ILFD) is described, where a pair of switched capacitors is used to select the division ratio between 2 and 3. The locking range analysis of the ILFD based on the gain and phase conditions is discussed. Based on the analysis, the op