𝔖 Bobbio Scriptorium
✦   LIBER   ✦

A low-power SiGe BiCMOS series-tuned divide-by-3 injection locked oscillators

✍ Scribed by Sheng-Lyang Jang; Ren-Kai Yang; Cheng-Chen Liu; Ching-Wen Hsue


Publisher
John Wiley and Sons
Year
2009
Tongue
English
Weight
311 KB
Volume
51
Category
Article
ISSN
0895-2477

No coin nor oath required. For personal study only.

✦ Synopsis


Abstract

An LC‐tank oscillator‐based divide‐by‐3 injection locked frequency divider (ILFD) is proposed and the series‐tuned Armstrong ILFD were implemented in the 0.35 μm SiGe 3P3M BiCMOS technology. Measurement results show that when the supply voltage V~dd~ is biased at 1.2 V, the free‐running oscillation frequency of the ILFD is tunable from 1.19 GHz to 1.0 GHz, and at the incident power of 0 dBm, the operation locking range is about 0.65 GHz, from the incident frequency 3.03–3.68 GHz. The core power consumption is 2.05 mW at V~dd~ = 1.2 V. © 2009 Wiley Periodicals, Inc. Microwave Opt Technol Lett 51: 2239–2242, 2009; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.24517


📜 SIMILAR VOLUMES


A low power LC-tank SiGe BiCMOS injectio
✍ Sheng-Lyang Jang; Jyun-Yan Wun; Cheng-Chen Liu; Miin-Horng Juang 📂 Article 📅 2009 🏛 John Wiley and Sons 🌐 English ⚖ 339 KB

## Abstract An LC‐tank injection locked frequency divider (ILFD) is proposed, and the ILFDs with a direct‐injection MOSFET and a tail‐injection HBT were implemented in the 0.35 μm SiGe 3P3M BiCMOS technology. Measurement results show that when the tuning voltage is tuned from 0 V to 1.8 V, the free

A six-phase divide-by-3 injection locked
✍ Sheng-Lyang Jang; Kuan-Chun Shen; Chia-Wei Chang; Miin-Horng Juang 📂 Article 📅 2009 🏛 John Wiley and Sons 🌐 English ⚖ 332 KB

## Abstract This article presents a six‐phase silicon‐germanium (SiGe) heterojunction bipolar transistor divide‐by‐3 injection locked frequency divider (ILFD). The ILFD is based on a three‐stage differential ring oscillator (voltage controlled oscillators) and was fabricated in the 0.35 μm SiGe 3P3

A dual-band divide-by-2 injection locked
✍ Sheng-Lyang Jang; Chih-Chieh Shih; Chia-Wei Chang; Cheng-Chen Liu; Jhin-Fang Hua 📂 Article 📅 2010 🏛 John Wiley and Sons 🌐 English ⚖ 585 KB

## Abstract A fourth order resonator has been implemented to design an injection locked frequency divider (ILFD) implemented in a 0.35‐μm SiGe 3P3M BiCMOS process. The ILFD is realized with a cross‐coupled HBT LC‐tank oscillator with switched varactor bias for frequency band selection. The LC tank

A low power CMOS divide-by-3 LC-tank inj
✍ Sheng-Lyang Jang; Wei Hsung Yeh; Chien-Feng Lee; M.-H. Juang 📂 Article 📅 2007 🏛 John Wiley and Sons 🌐 English ⚖ 363 KB

## Abstract This article presents a divide‐by‐3 CMOS injection locked frequency divider (ILFD) fabricated in a 0.18um CMOS process. The ILFD circuit is realized with a complementary Colpitts CMOS LC‐tank oscillator with an injection MOS connected between the voltage controlled oscillator (VCO) outp

A low-voltage divide-by-3 injection-lock
✍ Chien-Feng Lee; Sheng-Lyang Jang 📂 Article 📅 2008 🏛 John Wiley and Sons 🌐 English ⚖ 565 KB

## Abstract This study proposes a new low‐voltage divide‐by‐3 CMOS injection locked frequency divider (ILFD) fabricated in a 0.18‐μm CMOS process and describes the operation principle of the ILFD. The ILFD circuit is realized with a CMOS dynamic threshold voltage LC‐tank voltage‐controlled‐oscillat

High-frequency low-power LC divide-by-2/
✍ Y. N. Miao; C.C. Boon; M. A. Do; K. S. Yeo; Y. X. Zhang 📂 Article 📅 2010 🏛 John Wiley and Sons 🌐 English ⚖ 291 KB

## Abstract An LC divide‐by‐2/3 injection‐locked frequency divider (ILFD) is described, where a pair of switched capacitors is used to select the division ratio between 2 and 3. The locking range analysis of the ILFD based on the gain and phase conditions is discussed. Based on the analysis, the op