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A Landauer Approach to Nanoscale MOSFETs

โœ Scribed by M. Lundstrom; J.-H. Rhew


Book ID
110429444
Publisher
Springer
Year
2002
Tongue
English
Weight
333 KB
Volume
1
Category
Article
ISSN
1569-8025

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๐Ÿ“œ SIMILAR VOLUMES


Simulation of nanoscale MOSFETs: a scatt
โœ Zhibin Ren; Mark Lundstrom ๐Ÿ“‚ Article ๐Ÿ“… 2000 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 564 KB

A hypothetical, well-designed 25 nm channel length MOSFET is examined by numerical simulation and the results are interpreted in terms of scattering theory. Even for such short channel lengths and complex channel doping profiles, we show that the effective channel length is a physically well-defined