✦ LIBER ✦

Nanoscale silicon MOSFETs: A theoretical study

✍ Scribed by Sverdlov, V.A.; Walls, T.J.; Likharev, K.K.

Book ID: 114617205
Publisher: IEEE
Year: 2003
Tongue: English
Weight: 768 KB
Volume: 50
Category: Article
ISSN: 0018-9383
DOI: 10.1109/ted.2003.816523

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

A theoretical study of light emission fr

A theoretical study of light emission from nanoscale silicon

✍ Nicola A. Hill; K. Birgitta Whaley 📂 Article 📅 1996 🏛 Springer US 🌐 English ⚖ 43 KB

On Backscattering and Mobility in Nanosc

On Backscattering and Mobility in Nanoscale Silicon MOSFETs

✍ Changwook Jeong; Antoniadis, D.A.; Lundstrom, M.S. 📂 Article 📅 2009 🏛 IEEE 🌐 English ⚖ 674 KB

A comprehensive study on the FIBL of nan

A comprehensive study on the FIBL of nanoscale MOSFETs

✍ Bing-Yue Tsui; Li-Feng Chin 📂 Article 📅 2004 🏛 IEEE 🌐 English ⚖ 250 KB

A Landauer Approach to Nanoscale MOSFETs

✍ M. Lundstrom; J.-H. Rhew 📂 Article 📅 2002 🏛 Springer 🌐 English ⚖ 333 KB

Monte Carlo Simulation of Nanoscale SOI

Monte Carlo Simulation of Nanoscale SOI MOSFETs

✍ A. A. Sidorov; V. V. V'yurkov; A. A. Orlikovsky 📂 Article 📅 2004 🏛 Springer 🌐 English ⚖ 261 KB

Simulation of nanoscale MOSFETs: a scatt

Simulation of nanoscale MOSFETs: a scattering theory interpretation

✍ Zhibin Ren; Mark Lundstrom 📂 Article 📅 2000 🏛 Elsevier Science 🌐 English ⚖ 564 KB

A hypothetical, well-designed 25 nm channel length MOSFET is examined by numerical simulation and the results are interpreted in terms of scattering theory. Even for such short channel lengths and complex channel doping profiles, we show that the effective channel length is a physically well-defined