Simulation of nanoscale MOSFETs: a scattering theory interpretation

✍ Scribed by Zhibin Ren; Mark Lundstrom

• Book ID: 102976870
• Publisher: Elsevier Science
• Year: 2000
• Tongue: English
• Weight: 564 KB
• Volume: 27
• Category: Article
• ISSN: 0749-6036
• DOI: 10.1006/spmi.1999.0798

✦ Synopsis

A hypothetical, well-designed 25 nm channel length MOSFET is examined by numerical simulation and the results are interpreted in terms of scattering theory. Even for such short channel lengths and complex channel doping profiles, we show that the effective channel length is a physically well-defined concept and that the beginning of the channel is readily identified. We show that the on-current is controlled by transport near the source end of the channel and that the device delivers about 50% of the upper limit (ballistic) on-current (as do all devices designed according to the conventional scaling paradigm). Finally, we show that standard, widely-used carrier transport models predict significantly different oncurrents for devices of this scale.