Simulation of nanoscale MOSFETs: a scatt
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Zhibin Ren; Mark Lundstrom
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Article
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2000
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Elsevier Science
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English
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A hypothetical, well-designed 25 nm channel length MOSFET is examined by numerical simulation and the results are interpreted in terms of scattering theory. Even for such short channel lengths and complex channel doping profiles, we show that the effective channel length is a physically well-defined