The relaxation of edge channels in the quantum Hall regime is considerably different in Si-MOSFETs than in GaAs/A1GaAs heterostructures due to the different material properties. These differences are also of great importance at low carrier densities (10 is m'2), where an isulating state occurs. Both
Spin dependence of inter-edge-channel scattering in Si-MOSFETs in the quantum Hall regime
β Scribed by P.C. van Son; S.L. Wang; T.M. Klapwijk
- Book ID
- 118365010
- Publisher
- Elsevier Science
- Year
- 1992
- Tongue
- English
- Weight
- 297 KB
- Volume
- 263
- Category
- Article
- ISSN
- 0039-6028
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Resonant inelastic light scattering experiments access the low lying excitations of electron liquids in the fractional quantum Hall regime in the range 2=5 $ n $ 1=3: Modes associated with changes in the charge and spin degrees of freedom are measured. Spectra of spin reversed excitations at filling
## Abstract We investigate two features of the transverse resistance __R~xy~__ in a SiβMOSFET in the quantum Hall effect regime. The first, the βovershootβ phenomenon, is observed at filling factor Ξ½ = 3. In this case, when the magnetic field increases and the filling factor Ξ½ approaches Ξ½ = 3, __R