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A high-voltage output driver in a 2.5-V 0.25-μm CMOS technology

✍ Scribed by Serneels, B.; Piessens, T.; Steyaert, M.; Dehaene, W.


Book ID
117884065
Publisher
IEEE
Year
2005
Tongue
English
Weight
1005 KB
Volume
40
Category
Article
ISSN
0018-9200

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This paper presents the design of high-voltage NMOS and PMOS devices with shallow trench isolation (STI) in standard 0.25 mm/5 V CMOS technology. Breakdown voltages of 20 V for n-channel device with a specific on resistance of 1.06 mO cm 2 and À20 V for p-channel device with a specific on resistance