## Abstract The effects of positive electron resist structures and __G__ values for scission on dry etching durability have been studied with regard to plasma etching, reactive sputter etching, and plasma ashing. Polymers of aromatic methacrylates, especially poly(ฮฑโmethylstyrene), all of which con
A dry-etch resistant positive-working electron resist
โ Scribed by E. D. Roberts
- Publisher
- Society for Plastic Engineers
- Year
- 1983
- Tongue
- English
- Weight
- 783 KB
- Volume
- 23
- Category
- Article
- ISSN
- 0032-3888
No coin nor oath required. For personal study only.
โฆ Synopsis
Abstract
This paper describes two types of crossโlinked positiveโworking electron resists. The first is based upon phenolโformaldehyde resins crosslinked to polyโ(methyl methacrylate) by phenolic ester groups. The second type is based upon polystyrene, crosslinked by carboxylic acid anhydride groups. The resist properties can be varied by changing the proportion of crosslinks. A version of the second type which contains about 95 percent styrene units is described. This material shows very good resistance to degradation in a plasmaโetching process for preparing chromium on glass masks, even when it is used as a very thin film.
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