๐”– Bobbio Scriptorium
โœฆ   LIBER   โœฆ

A direct gate field-effect transistor for the measurement of DC electric fields

โœ Scribed by Horenstein, M.N.


Book ID
114595114
Publisher
IEEE
Year
1985
Tongue
English
Weight
228 KB
Volume
32
Category
Article
ISSN
0018-9383

No coin nor oath required. For personal study only.


๐Ÿ“œ SIMILAR VOLUMES


Simulation of the lateral electrical fie
โœ Z. Gergintschew; D. Schipanski; P. Kornetzky; I. Eisele; B. Flietner ๐Ÿ“‚ Article ๐Ÿ“… 1993 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 477 KB

The adsorption at the open insulator surface under the air gap of suspended-gate field-effect transistors (SGFETs), which leads to mobile charges, and their r~~bution due to lateral clectrica~ field strengths are two of the reasons for the threshold voltage ins~bility of these gas sensors. A two-dim