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Simulation of the lateral electrical field for the analysis of threshold voltage instabilities of suspended-gate field-effect transistors

✍ Scribed by Z. Gergintschew; D. Schipanski; P. Kornetzky; I. Eisele; B. Flietner

Publisher
Elsevier Science
Year
1993
Tongue
English
Weight
477 KB
Volume
12
Category
Article
ISSN
0925-4005

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✦ Synopsis

The adsorption at the open insulator surface under the air gap of suspended-gate field-effect transistors (SGFETs), which leads to mobile charges, and their r~~bution due to lateral clectrica~ field strengths are two of the reasons for the threshold voltage ins~bility of these gas sensors. A two-dimensional computer simulation has been carried out to determine the lateral electrical field in the device, especially in the gate insulator area. The evaluation of the modelling results has led to useful conclusions about the design optimization of the sensor and its operating conditions.

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