## Abstract Highโgain shuntโseries shuntโshunt wideband amplifiers with and without emitterโpeaking capacitors are demonstrated by using GaInP/GaAs HBT technology. Experimental results show that the power gain is 28 dB from DC to 6 GHz for a wideband amplifier without emitterโpeaking capacitors. On
A DC-10 GHz high gain-low noise GaAs HBT direct-coupled amplifier
โ Scribed by Kobayashi, K.W.; Oki, A.K.
- Book ID
- 111874311
- Publisher
- IEEE
- Year
- 1995
- Tongue
- English
- Weight
- 256 KB
- Volume
- 5
- Category
- Article
- ISSN
- 1051-8207
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๐ SIMILAR VOLUMES
A 5.2-GHz monolithic low-power low-noise amplifier (LNA) with a quasi-cascode configuration using InGaP-GaAs HBT technology is reported for the first time. A state-of-the-art noise figure of 2.39 dB at 5.2 GHz is obtained among all bipolar LNAs with a fully on-chip input-matching network. The input
## Abstract A monolithic concurrent dualโband lowโnoise amplifier (LNA) using InGaP/GaAs HBT technology is demonstrated for the first time. The LNA provides narrowband gain and matching simultaneously at both 1.57โGHz (GPS) and 5.25โGHz (ISM) bands. It consumes only 15โmW power and achieves transdu