DC to 6-Ghz high-gain low-noise GaInp/GaAs HBT direct-coupled amplifiers with and without emitter-capacitive peaking
✍ Scribed by C. C. Meng; T. H. Wu; S. S. Lu
- Publisher
- John Wiley and Sons
- Year
- 2004
- Tongue
- English
- Weight
- 142 KB
- Volume
- 43
- Category
- Article
- ISSN
- 0895-2477
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✦ Synopsis
Abstract
High‐gain shunt‐series shunt‐shunt wideband amplifiers with and without emitter‐peaking capacitors are demonstrated by using GaInP/GaAs HBT technology. Experimental results show that the power gain is 28 dB from DC to 6 GHz for a wideband amplifier without emitter‐peaking capacitors. On the other hand, a wideband amplifier with emitter‐peaking capacitors can increase the gain bandwidth up to 8 GHz at the cost of lower input/output return loss. Both circuits have similar power and noise performance. The noise figures of both designs are less than 2.8 dB for frequencies below 6 GHz. OP~1dB~ and OIP~3~ are 7 and 20 dBm at 2 GHz, respectively. Total current consumption is 67 mA at 5‐V supply voltage for both wideband amplifiers. © 2004 Wiley Periodicals, Inc. Microwave Opt Technol Lett 43: 67–69, 2004; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.20377