✦ LIBER ✦

A computer aided procedure for experimental chamcterization and small signal modeling of MESFETs

✍ Scribed by Ferrero, Andrea ;Pisani, Umberto

Book ID: 112089454
Publisher: John Wiley and Sons
Year: 1990
Tongue: English
Weight: 707 KB
Volume: 1
Category: Article
ISSN: 1124-318X
DOI: 10.1002/ett.4460010417

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

A large-signal physical MESFET model for

A large-signal physical MESFET model for computer-aided design and its applications

✍ Pantoja, R.R.; Howes, M.J.; Richardson, J.R.; Snowden, C.M. 📂 Article 📅 1989 🏛 IEEE 🌐 English ⚖ 709 KB

Neural networks for large- and small-sig

Neural networks for large- and small-signal modeling of MESFET/HEMT transistors

✍ Lazaro, M.; Santamaria, I.; Pantaleon, C. 📂 Article 📅 2001 🏛 IEEE 🌐 English ⚖ 167 KB

Experimental validation of a large-signa

Experimental validation of a large-signal MESFET model for submicron-gate-length devices

✍ Stefano D'Agostino; Claudio Paoloni 📂 Article 📅 1997 🏛 John Wiley and Sons 🌐 English ⚖ 124 KB 👁 2 views

Parameters of Gaps in the NRD Waveguide Dielectric ⑀ = 2.56, t = 2.7 mm, 2w = 2.4 mm, frequency = 50 GHz r

Device modeling for computer-aided desig

Device modeling for computer-aided design and analysis of integrated circuits

✍ Fred A. Lindholm 📂 Article 📅 1969 🏛 Elsevier Science 🌐 English ⚖ 776 KB

Computer-aided experimental modeling of

Computer-aided experimental modeling of a real system using graphical analysis of a step response data

✍ Murat Furat; İlyas Eker 📂 Article 📅 2010 🏛 John Wiley and Sons 🌐 English ⚖ 805 KB

A new procedure for the extraction of a

A new procedure for the extraction of a multibias linear model for MESFETs and HEMTs

✍ Alberto Di Martino; Eric Dutisseuil; Carine Ladner; Stefano Pisa; Pasquale Tomma 📂 Article 📅 2000 🏛 John Wiley and Sons 🌐 English ⚖ 99 KB 👁 2 views

Criteria to obtain an accurate multiple-bias linear model for MESFET and HEMT de¨ices are proposed. Based on these criteria, an automatic extraction procedure to identify model parameters has been de¨eloped. The extraction procedure has been successfully checked on HEMT de¨ices in GaAs and InP techn