A Comparison of the Performance and Stability of ZnO-TFTs With Silicon Dioxide and Nitride as Gate Insulators

✍ Scribed by Cross, R.B.M.; De Souza, M.M.; Deane, S.C.; Young, N.D.

• Book ID: 114619369
• Publisher: IEEE
• Year: 2008
• Tongue: English
• Weight: 387 KB
• Volume: 55
• Category: Article
• ISSN: 0018-9383
• DOI: 10.1109/ted.2008.918662