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A comparative study of Ga(CH3)3 and Ga(C2H5)3 in the mombe of GaAs

✍ Scribed by N. Pütz; H. Heinecke; M. Heyen; P. Balk; M. Weyers; H. Lüth

Book ID: 107789790
Publisher: Elsevier Science
Year: 1986
Tongue: English
Weight: 673 KB
Volume: 74
Category: Article
ISSN: 0022-0248
DOI: 10.1016/0022-0248(86)90118-1

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✦ Synopsis

This paper reports on the epitaxial growth of GaAs by means of molecular beams of Ga(CH~)3(TMG) or Ga(C'2 H~)3(TEG) and AsH3. Using TMG as the Ga source the films are p-type with carrier concentrations between 3 x 1019 and 3 x 1020 cm caused by carbon incorporation. Substituting TMG by TEG shifts the kinetically limited growth region to lower temperatures. Moreover, the background doping is reduced by several ordes of magnitude (into the iO'_1015 cm ~range) and even weakly n-type layers can he obtained. This behaviour is explained by the different Ga-C bond strengths in the metalorganic compounds.

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