This paper reports on the epitaxial growth of GaAs by means of molecular beams of Ga(CH~)3(TMG) or Ga(C'2 H~)3(TEG) and AsH3. Using TMG as the Ga source the films are p-type with carrier concentrations between 3 x 1019 and 3 x 1020 cm caused by carbon incorporation. Substituting TMG by TEG shifts th
✦ LIBER ✦
A comparative study of Ga(CH3)3 and Ga(C2H5)3 in the mombe of GaAs
✍ Scribed by N. Pütz; H. Heinecke; M. Heyen; P. Balk; M. Weyers; H. Lüth
- Book ID
- 107789789
- Publisher
- Elsevier Science
- Year
- 1986
- Tongue
- English
- Weight
- 673 KB
- Volume
- 74
- Category
- Article
- ISSN
- 0022-0248
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