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Synthesis and Structures of (N3)2Ga[(CH2)3NMe2], (N3)Ga[(CH2)3NMe2]2 and (N3)3Ga(NR3) (R = CH3, C2H5)

✍ Scribed by Anjana Devi; Harald Sussek; Hans Pritzkow; Manuela Winter; Roland A. Fischer

Publisher
John Wiley and Sons
Year
1999
Tongue
English
Weight
373 KB
Volume
1999
Category
Article
ISSN
1434-1948

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✦ Synopsis

The synthesis, properties and X-ray single crystal structure bridges. In contrast, compounds 2 and 3a-b (R = CH 3 , C 2 H 5 ) are monomeric in the solid state. The suitability of the analysis of the intramolecularly adduct-stabilised organogallium bisazide (N 3 ) 2 Ga[(CH 2 ) 3 NMe 2 ] (1), the mono volatile compounds 1 and 2 as single source precursors to grow GaN thin films by chemical vapour deposition is azide (N 3 )Ga[(CH 2 ) 3 NMe 2 ] 2 (2) and the trialkylamine adducts of triazidogallium of the type (N 3 ) 3 Ga(NR 3 ) (3a-d; compared, showing that preferentially oriented crystalline films can be obtained from compound 2 on sapphire R = alkyl) are reported. An unusual isomer 1b of compound 1 is described, which was obtained by slow cooling of the substrates at 600-700 °C in vacuo (0.1 Pa). However the films have a grey rather than a transparent appearance, which is analytically pure neat liquid compound 1 to 0 °C. The new and unusual structure 1b can be regarded as a weak presumably due to N-deficiency owing to the lower Ncontent of the single molecule precursor 2 relative to 1. associate of dimers linked together by head-to-tail azide als. [11Ϫ19] Novel volatile single source precursors for use in [ ] Part 7: Ref. [31] [a] Lehrstuhl für Anorganische Chemie II,

Results and Discussion

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