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A comparative study of electrical and optical properties of InN and In0.48Ga0.52N

✍ Scribed by M. Gunes; N. Balkan; D. Zanato; W.J. Schaff


Publisher
Elsevier Science
Year
2009
Tongue
English
Weight
302 KB
Volume
40
Category
Article
ISSN
0026-2692

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Ga0.521n0.48 P layers grown by chemical beam epitaxy (CBE) and lattice matched to (100) GaAs were investigated by spectroscopic methods (Raman, BriUouin and ellipsometry). For the first time, the acoustic properties of this crystal were measured, as well as the variation of the real part of the refr