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A compact VCE growth system for in situ studies of epitaxy

✍ Scribed by P. Schmidt; K. Deppert; S. Jeppesen; J. Jönsson; G. Paulsson; L. Samuelson

Book ID
107790441
Publisher
Elsevier Science
Year
1990
Tongue
English
Weight
474 KB
Volume
105
Category
Article
ISSN
0022-0248

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The value of in situ monitoring to study growth dynamics and surface reaction kinetics in a gas source molecular beam epitaxy process is illustrated with reference to the growth of Si ®lms on Si(001) substrates using a beam of disilane (Si 2 H 6 ). By using a combination of re¯ection high-energy ele