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In situ etch treatment of bulk surface for epitaxial layer growth optimization

✍ Scribed by C.F. Pirri; S. Ferrero; L. Scaltrito; D. Perrone; S. De Angelis; M. Mauceri; S. Leone; G. Pistone; G. Abbondanza; D. Crippa

Book ID
108207540
Publisher
Elsevier Science
Year
2006
Tongue
English
Weight
303 KB
Volume
83
Category
Article
ISSN
0167-9317

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In situ etch treatments of silicon carbi
In situ etch treatments of silicon carbide epitaxial layer for morphological quality improvement of the surfaces
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## Abstract Different homo epitaxial 4H‐SiC commercial wafers were undergone hydrogen etching process that was developed in the reaction chamber of a Hot Wall Chemical Vapor Deposition (HWCVD) reactor. We have studied the effects of physical desorption to point out the morphology and the structural