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In situ temperature measurement by infrared absorption for low-temperature epitaxial growth of homo- and hetero-epitaxial layers on silicon

✍ Scribed by J. C. Sturm; P. V. Schwartz; P. M. Garone


Book ID
112812166
Publisher
Springer US
Year
1990
Tongue
English
Weight
342 KB
Volume
19
Category
Article
ISSN
0361-5235

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