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In situ studies of epitaxial growth in the low energy electron microscope

✍ Scribed by W. Świȩch

Publisher
Elsevier Science
Year
1989
Weight
59 KB
Volume
213
Category
Article
ISSN
0167-2584

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The value of in situ monitoring to study growth dynamics and surface reaction kinetics in a gas source molecular beam epitaxy process is illustrated with reference to the growth of Si ®lms on Si(001) substrates using a beam of disilane (Si 2 H 6 ). By using a combination of re¯ection high-energy ele