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A compact temperature sensor for a 1.0 μm CMOS technology using lateral p-n-p transistors

✍ Scribed by Enric Montané; Sebastian A. Bota; Josep Samitier

Publisher
Elsevier Science
Year
1998
Tongue
English
Weight
324 KB
Volume
29
Category
Article
ISSN
0026-2692

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✦ Synopsis

A compact temperature sensor using lateral p-n-p bipolar transistors has been fabricated and tested in a standard 1.0#m digital n-well CMOS process. Like their n-p-n counterparts in p-well processes, these lateral p-n-p devices exhibit good lateral /3. The accuracy of the temperature sensor is close to the performances obtained in bipolar technology, an output proportional to absolute temperature is obtained (0.54mV/K) from 0 to +70°C, although the sensor can be used in wide-ranging applications after curvature correction. The device has an area of only 0.018mm 2.

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