𝔖 Bobbio Scriptorium
✦   LIBER   ✦

A bistable behavior of the Si and Se donors in AlxGa1−xAs

✍ Scribed by S.W Biernacki

Publisher
Elsevier Science
Year
1996
Tongue
English
Weight
658 KB
Volume
98
Category
Article
ISSN
0038-1098

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

Coexistence of the DX center and other S
Coexistence of the DX center and other Si-related electron bound states in AlxGa1−xAs
✍ A. Baraldi; P. Frigeri; C. Ghezzi; C. Ghezzi; A. Parisini; A. Bosacchi; S. Franc 📂 Article 📅 1994 🏛 Elsevier Science 🌐 English ⚖ 370 KB

The coexistence of the DX center with other donor-related bound states has been investigated in Si-doped direct gap AI,Ga I \_ xAs, by comparing electron density data obtained by capacitance/voltage and Hall measurements. These experiments were carried out under saturated persistent photoconductivit

Multiconfigurate Character of the DX Cen
Multiconfigurate Character of the DX Center and Statistical Analysis of Transport Data in Si-Doped AlxGa1—xAs
✍ A. Triki; H. Mejri; F. Rziga Ouaja; A. Selmi 📂 Article 📅 2001 🏛 John Wiley and Sons 🌐 English ⚖ 96 KB 👁 2 views

Two statistics are developed using the multiconfigurate character of the DX center to analyse donors in n-type Al x Ga 1--x As:Si. The first statistics is derived assuming that the conduction electrons arise exclusively from DX centers. The second statistics supposes the existence of shallow donors