Coexistence of the DX center and other Si-related electron bound states in AlxGa1−xAs

✍ Scribed by A. Baraldi; P. Frigeri; C. Ghezzi; C. Ghezzi; A. Parisini; A. Bosacchi; S. Franchi; E. Gombia; R. Mosca

• Publisher: Elsevier Science
• Year: 1994
• Tongue: English
• Weight: 370 KB
• Volume: 28
• Category: Article
• ISSN: 0921-5107
• DOI: 10.1016/0921-5107(94)90095-7

✦ Synopsis

The coexistence of the DX center with other donor-related bound states has been investigated in Si-doped direct gap AI,Ga I _ xAs, by comparing electron density data obtained by capacitance/voltage and Hall measurements. These experiments were carried out under saturated persistent photoconductivity conditions, as well as during isothermal capture transients. A D ° bound state degenerate in energy with the conduction band is populated through low temperature photo-ionization of the DX center. The D ° level comes very close in energy to the F minimum when the direct-to-indirect gap transition is approached. Under defined conditions, the final stage of isothermal capture transients is dominated by the electron freezing into hydrogenic bound states linked to F.