𝔖 Bobbio Scriptorium
✦   LIBER   ✦

A 3.1–4.8-GHz direct-conversion mixer in 0.35-μm CMOS for mode-1

✍ Scribed by Farid Touati; Skander Douss; Mourad Loulou

Publisher
Springer
Year
2009
Tongue
English
Weight
675 KB
Volume
63
Category
Article
ISSN
0925-1030

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

A 0.18-μm 3.1–4.8 GHz CMOS wideband LNA
A 0.18-μm 3.1–4.8 GHz CMOS wideband LNA for UWB system
✍ Moo I. Jeong; Jung N. Lee; Chang S. Lee 📂 Article 📅 2008 🏛 John Wiley and Sons 🌐 English ⚖ 328 KB

## Abstract We have proposed a 3.1–4.8 GHz CMOS wideband low noise amplifier (LNA) for ultra wideband system. The LNA is fabricated with the 0.18‐μm 1P6M standard CMOS process. Measurement of the CMOS LNA was performed using RF probe station. From 3.1 to 4.8 GHz, the wideband LNA exhibits a noise f

A 0.855 1.342 GHz octa-phase LC VCO for
A 0.855 1.342 GHz octa-phase LC VCO for multimode direct conversion receiver in 0.18-μm CMOS
✍ Sangho Lee; Hyeongdong Kim 📂 Article 📅 2008 🏛 John Wiley and Sons 🌐 English ⚖ 411 KB

## Abstract New fully integrated, multiband octa‐phase LC VCOs are presented. The VCO is composed of four identical differential VCOs and implemented in a 0.18‐μm TSMC CMOS process. Four individual VCOs are connected by a series‐coupling transistor to obtain the octa‐phase signal and low phase nois

A 0.18 μm 3.1–4.8 GHz CMOS wideband sing
A 0.18 μm 3.1–4.8 GHz CMOS wideband single to differential LNA for UWB system
✍ Moo I. Jeong; Jung S. Lee; No C. Myung; Jong M. Kim; Chang S. Lee 📂 Article 📅 2009 🏛 John Wiley and Sons 🌐 English ⚖ 318 KB

## Abstract We have proposed a 3.1–4.8 GHz CMOS wideband single to differential low noise amplifier (LNA) for ultra wideband system. The LNA is fabricated with the 0.18 μm 1P6M standard CMOS process. Measurement of the CMOS LNA was performed using RF probe station. From 3.1 to 4.8 GHz, the wideband

A 1.2-V fully integrated 2.4-GHz low-noi
A 1.2-V fully integrated 2.4-GHz low-noise amplifier in 0.35-μm CMOS technology
✍ C. C. Meng; M. H. Chiang; T. H. Wu 📂 Article 📅 2002 🏛 John Wiley and Sons 🌐 English ⚖ 314 KB

## Abstract A 1.2‐V fully integrated 0.35‐μm inductively degenerated common source CMOS low‐noise amplifier has been demonstrated at 2.4 GHz in this paper. A simple common source configuration can be operated at lower voltage and has lower output impedance when compared with a conventional high out

A band selected 3.1–30.1 GHz distributed
A band selected 3.1–30.1 GHz distributed amplifier in 0.18-μm CMOS technology
✍ Wu-Shiung Feng; Chien-Cheng Wei; Hui-Chen Hsu; Chia-Hsun Chen; Prasenjit Chatter 📂 Article 📅 2011 🏛 John Wiley and Sons 🌐 English ⚖ 335 KB

## Abstract A band‐selected 3.1–30.1 GHz CMOS distributed amplifier (DA) for extended UWB application is presented in this article. The proposed circuit was designed and fabricated with a 0.18‐μm CMOS technology. This circuit uses a sharpening technique to improve the frequency response from low‐pa