Two methods have been employed to prepare boron-doped carbon materials. One method utilized ion implantation to dope the surface region of vitreous carbon with up to 12 atomic % boron. The other method used CVD to prepare -1-2 micron thick carbon coatings with various boron contents (0 to 15 atomic
95/06018 Synthesis and characterization of boron-doped carbons
- Publisher
- Elsevier Science
- Year
- 1995
- Weight
- 195 KB
- Volume
- 36
- Category
- Article
- ISSN
- 0140-6701
No coin nor oath required. For personal study only.
๐ SIMILAR VOLUMES
Boron-and silicon-doped carbon clusters of the type BmC . (m = 1-4) and Si,,C, (m = 1, 2) have been produced via the laser-vaporization cluster beam technique. The observed features of the intensity distribution in mass spectra suggest that B atoms can be incorporated into the clusters with much hig
tics and a fast charge-discharge rate with a time constant of 6 s. The gravimetric specific capacitance and energy density of OMC oxidized at 60 ยฐC are 138 F g ร1 and 3.9 Wh kg ร1 , respectively, at a scanning rate of 5 mV s ร1 . These values are, respectively, 57% and 63% greater than for the un-t
Abst~ct-3oron-doped carbons were prepared at temperatures from 1000 to 28CWC. The effect of boron doping on the thermal conductivity of carbons has been studied and discussed with the results from Raman scattering. Boron doping above 2200ยฐC depressed the thermal conductivity of carbons and increased