Cluster ion implantation is a useful technique for manufacturing ultra-shallow-junction. In order to investigate the depth and lateral distribution as well as cluster dissociation, we performed a molecular dynamics simulation that injects 200-500 eV/atom boron cluster into single crystal silicon. Th
3D simulations of ion implantation processes
β Scribed by A. Claverie; C. Vieu; J. Beauvillain
- Publisher
- Elsevier Science
- Year
- 1989
- Tongue
- English
- Weight
- 363 KB
- Volume
- 43
- Category
- Article
- ISSN
- 0169-4332
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Computer simulation and analysis of our data compared to published results on the activation of impurity dopants in GaAs, have lead to the establishment of a theoretical model for the electrical properties of GaAs doped by ion implantation and annealed using rapid thermal annealing. A comparison of