Simulation of electrical properties in ion implanted GaAs

✍ Scribed by H. Ali-Boucetta; R. Bensalem; S. Alleg; A. Smith; R. Gwilliam; B. Sealy

• Publisher: Elsevier
• Year: 2009
• Tongue: English
• Weight: 255 KB
• Volume: 2
• Category: Article
• ISSN: 1875-3892
• DOI: 10.1016/j.phpro.2009.11.027

✦ Synopsis

Computer simulation and analysis of our data compared to published results on the activation of impurity dopants in GaAs, have lead to the establishment of a theoretical model for the electrical properties of GaAs doped by ion implantation and annealed using rapid thermal annealing. A comparison of the behavior of different dopant species have shown that all implants in GaAs have almost the same activation mechanism except for the amphoteric Si implants where electrical activity increased normally with annealing times and temperature up to 900°C, then decreased showing that a compensating mechanisms taking place at temperature higher than 850°C. Finally the Si implanted GaAs become P type for longer annealing times at high temperatures. The purpose of our work was to establish a theoretical model capable of explaining the behavior of Si dopants in GaAs, from relationship between the annealing conditions of Si in GaAs and the electrical properties of Si implanted in GaAs.