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Electrical and cathodoluminescence measurements on ion implanted donor layers in GaAs

✍ Scribed by J.M. Woodcock; J.M. Shannon; D.J. Clark

Publisher
Elsevier Science
Year
1975
Tongue
English
Weight
692 KB
Volume
18
Category
Article
ISSN
0038-1101

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Hydrogen detection and analysis was carried out on the undoped semi-insulating (S.I.) gallium arsenide (GaAs) single crystal using conventional elastic recoil detection analysis (ERDA) technique with high energy, heavy ion beam. Presence of hydrogen (nearly 3 x 10 20 atoms/cc) has been observed on t