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350.9 nm UV laser diode grown on sapphire substrate

โœ Scribed by M. Iwaya; K. Iida; T. Kawashima; A. Miyazaki; H. Kasugai; S. Mishima; A. Honshio; Y. Miyake; S. Kamiyama; H. Amano; I. Akasaki


Book ID
104557472
Publisher
John Wiley and Sons
Year
2005
Tongue
English
Weight
176 KB
Volume
2
Category
Article
ISSN
1862-6351

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## Abstract Using microโ€beam Xโ€ray diffraction (XRD), small __c__โ€axis tilting was observed in maskless epitaxially laterally overgrown GaN (ELOโ€GaN), which is a suitable underlying layer for realizing a reliable GaNโ€based blueโ€violet laser diode. By analyzing the microโ€scale structure of ELOโ€GaN w