## Abstract In this work we present degradation studies of GaN based blue‐violet laser diodes grown on different substrates. By replacing the SiC substrate by GaN substrate, we change from hetero to homo epitaxy, while the threading dislocation density (TDD) is reduced by 3 orders of magnitude. A d
Spectral dynamics of 405 nm (Al,In)GaN laser diodes grown on GaN and SiC substrate
✍ Scribed by Meyer, Tobias; Braun, Harald; Schwarz, Ulrich T.; Tautz, Sönke; Schillgalies, Marc; Lutgen, Stephan; Strauss, Uwe
- Book ID
- 115409163
- Publisher
- Optical Society of America
- Year
- 2008
- Tongue
- English
- Weight
- 311 KB
- Volume
- 16
- Category
- Article
- ISSN
- 1094-4087
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