Stimulated emission at 474 nm from an InGaN laser diode structure grown on a (1122) GaN substrate

✍ Scribed by Kojima, K.; Funato, M.; Kawakami, Y.; Masui, S.; Nagahama, S.; Mukai, T.

• Book ID: 120331742
• Publisher: American Institute of Physics
• Year: 2007
• Tongue: English
• Weight: 642 KB
• Volume: 91
• Category: Article
• ISSN: 0003-6951
• DOI: 10.1063/1.2799876