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300-GHz InAlN/GaN HEMTs With InGaN Back Barrier

✍ Scribed by Lee, Dong Seup; Gao, Xiang; Guo, Shiping; Kopp, David; Fay, Patrick; Palacios, Tomás


Book ID
120503959
Publisher
IEEE
Year
2011
Tongue
English
Weight
477 KB
Volume
32
Category
Article
ISSN
0741-3106

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InAlN-barrier HFETs with GaN and InGaN c
✍ Liberis, J. ;Matulionienė, I. ;Matulionis, A. ;Šermukšnis, E. ;Xie, J. ;Leach 📂 Article 📅 2009 🏛 John Wiley and Sons 🌐 English ⚖ 951 KB

## Abstract Advantages and drawbacks of InN‐containing GaN‐based heterostructure field‐effect transistors (HFETs) are reviewed. The main attention is paid to fundamental processes and experimental observations associated with hot‐electron transport in two‐dimensional electron gas (2DEG) channels su