Evidence for impact ionisation in AlGaN/GaN HEMTs with InGaN back-barrier

✍ Scribed by Killat, N.; Ťapajna, M.; Faqir, M.; Palacios, T.; Kuball, M.

• Book ID: 127326374
• Publisher: The Institution of Electrical Engineers
• Year: 2011
• Tongue: English
• Weight: 175 KB
• Volume: 47
• Category: Article
• ISSN: 0013-5194
• DOI: 10.1049/el.2010.7540