✦ LIBER ✦

245-GHz InAlN/GaN HEMTs With Oxygen Plasma Treatment

✍ Scribed by Lee, Dong Seup; Chung, Jinwook W.; Wang, Han; Gao, Xiang; Guo, Shiping; Fay, Patrick; Palacios, TomÃ¡s

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

300-GHz InAlN/GaN HEMTs With InGaN Back

✍ Lee, Dong Seup; Gao, Xiang; Guo, Shiping; Kopp, David; Fay, Patrick; Palacios, T 📂 Article 📅 2011 🏛 IEEE 🌐 English ⚖ 477 KB

210-GHz InAlN/GaN HEMTs With Dielectric-

✍ R. Wang; G. Li; O. Laboutin; Y. Cao; W. Johnson; G. Snider; P. Fay; D. Jena; H. 📂 Article 📅 2011 🏛 IEEE 🌐 English ⚖ 331 KB

InAlN/AlN/GaN HEMTs With Regrown Ohmic C

✍ Yuanzheng Yue; Zongyang Hu; Jia Guo; Sensale-Rodriguez, B.; Guowang Li; Ronghua 📂 Article 📅 2012 🏛 IEEE 🌐 English ⚖ 463 KB

An extrinsic f max > 100 GHz InAlN/GaN H

✍ Liu, Bo; Feng, Zhihong; Dun, Shaobo; Zhang, Xiongwen; Gu, Guodong; Wang, Yuangan 📂 Article 📅 2013 🏛 IOP Publishing 🌐 English ⚖ 363 KB

InAlN/GaN HEMTs on Sapphire Substrate Wi

✍ Lecourt, F.; Ketteniss, N.; Behmenburg, H.; Defrance, N.; Hoel, V.; Eickelkamp, 📂 Article 📅 2011 🏛 IEEE 🌐 English ⚖ 129 KB

Effects of oxygen plasma treatment onVth

✍ Hong, Ki-Ha; Choi, Hyuk Soon; Hwang, Injun; Kim, Jongseob 📂 Article 📅 2014 🏛 The Korean Institute of Metals and Materials 🌐 English ⚖ 582 KB