30-nm-Gate AlGaN/GaN Heterostructure Field-Effect Transistors with a Current-Gain Cutoff Frequency of 181 GHz

✍ Scribed by Higashiwaki, Masataka; Mimura, Takashi; Matsui, Toshiaki

• Book ID: 127365770
• Publisher: Institute of Pure and Applied Physics
• Year: 2006
• Tongue: English
• Weight: 259 KB
• Volume: 45
• Category: Article
• ISSN: 0021-4922
• DOI: 10.1143/jjap.45.l1111