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12 W/mm AlGaN-GaN HFETs on silicon substrates

โœ Scribed by Johnson, J.W.; Piner, E.L.; Vescan, A.; Therrien, R.; Rajagopal, P.; Roberts, J.C.; Brown, J.D.; Singhal, S.; Linthicum, K.J.


Book ID
115496464
Publisher
IEEE
Year
2004
Tongue
English
Weight
123 KB
Volume
25
Category
Article
ISSN
0741-3106

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Experimental results of the low-frequency noise measurements on a large number of different AlGaN/GaN High Electron Mobility Transistors (HEMTs) grown on sapphire and SiC substrates have been presented. In the HEMTs grown on sapphire, the 1af noise is an order of magnitude (or more) higher than for