✦ LIBER ✦

10-GHz 4.69-W/mm InAlN/GaN HFET on sapphire substrate

✍ Scribed by Zhihong Feng; Bo Liu; Jiayun Yin; Jinjin Wang; Guodong Gu; Shaobo Dun; Shujun Cai

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

Erratum: 10-GHz 4.69-W/mm InAlN/GaN HFET

✍ Feng, Zhihong; Liu, Bo; Yin, Jiayun; Wang, Jinjin; Gu, Guodong; Dun, Shaobo; Cai 📂 Article 📅 2012 🏛 John Wiley and Sons 🌐 English ⚖ 176 KB

AlGaN/GaN HEMTs on (001) Silicon Substra

✍ Gerbedoen, J.-C.; Soltani, A.; Joblot, S.; De Jaeger, J.-C.; Gaquiere, C.; Cordi 📂 Article 📅 2010 🏛 IEEE 🌐 English ⚖ 471 KB