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Erratum: 10-GHz 4.69-W/mm InAlN/GaN HFET on sapphire substrate [Phys. Status Solidi C 9 , 855-857 (2012)]

✍ Scribed by Feng, Zhihong; Liu, Bo; Yin, Jiayun; Wang, Jinjin; Gu, Guodong; Dun, Shaobo; Cai, Shujun

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10-GHz 4.69-W/mm InAlN/GaN HFET on sapph

✍ Zhihong Feng; Bo Liu; Jiayun Yin; Jinjin Wang; Guodong Gu; Shaobo Dun; Shujun Ca 📂 Article 📅 2012 🏛 John Wiley and Sons 🌐 English ⚖ 333 KB