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γ-Irradiation Effect on Electronic Properties in Hydrogenated Amorphous Silicon

✍ Scribed by Shirafuji, J. ;Nagata, S. ;Shirakawa, K.


Publisher
John Wiley and Sons
Year
1986
Tongue
English
Weight
555 KB
Volume
98
Category
Article
ISSN
0031-8965

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Effect of charge on bond strength in hyd
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We have studied the effect of excess charge on the bond strength in the silanes SiH4 and Si2H6 to assess whether charge trapping in a solid-state lattice might promote the technologically important photodegradation of amorphous silicon alloys (the Staebler-Wronski effect). The calculations indicate