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Effect of charge on bond strength in hydrogenated amorphous silicon

✍ Scribed by B. W. Clare; G. Talukder; P. J. Jennings; J. C. L. Cornish; G. T. Hefter

Publisher: John Wiley and Sons
Year: 1994
Tongue: English
Weight: 655 KB
Volume: 15
Category: Article
ISSN: 0192-8651
DOI: 10.1002/jcc.540150608

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✦ Synopsis

We have studied the effect of excess charge on the bond strength in the silanes SiH4 and Si2H6 to assess whether charge trapping in a solid-state lattice might promote the technologically important photodegradation of amorphous silicon alloys (the Staebler-Wronski effect). The calculations indicate that both positive and negative charges reduce the strength of Si-H and Si-Si bonds considerably, to the point where they may be broken easily by visible or even infrared light.

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